Methods for measuring the full well capacity of CMOS image sensors

摘要

An integrated circuit device includes a transfer-gate transistor, and a photo diode connected to a source/drain region of the transfer-gate transistor. An electrical fuse is electrically coupled to a gate of the transfer-gate transistor. A diode is electrically coupled to the electrical fuse.

主权项

1. A method comprising:
forming a test structure comprising:
a transfer-gate transistor at a front surface of a semiconductor substrate;a photo diode in the semiconductor substrate, wherein the photo diode is connected to a first source/drain region of the transfer-gate transistor;a floating diffusion capacitor, wherein the floating diffusion capacitor is connected to a second source/drain region of the transfer-gate transistor; andan electrical fuse electrically coupled to a gate of the transfer-gate transistor burning the electrical fuse; and after the electrical fuse is burned, measuring a full well capacity of the test structure.