| 发明名称 |
Method of forming patterned hard mask layer |
| 摘要 |
A method of forming a patterned hark mask layer includes the following steps. A semiconductor substrate is provided. An amorphous silicon layer is formed on the semiconductor substrate. An implantation process is performed on the amorphous silicon layer. An annealing treatment is performed on the amorphous silicon layer after the implantation process. A patterned hard mask layer is formed on the amorphous silicon layer after the annealing treatment. |
| 申请公布号 |
US9543408(B1) |
申请公布日期 |
2017.01.10 |
| 申请号 |
US201514835730 |
申请日期 |
2015.08.26 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Yi-Hui;Lin Keng-Jen;Yang Chun-Yao;Wang Yu-Ren |
| 分类号 |
H01L21/3205;H01L29/66;H01L21/02;H01L21/265;H01L21/324;H01L21/3213;H01L21/3215 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method of forming a patterned hark mask layer, comprising:
providing a semiconductor substrate; forming an amorphous silicon layer on the semiconductor substrate; performing an implantation process on the amorphous silicon layer, wherein the implantation process is performed only on alignment regions on the semiconductor substrate; performing an annealing treatment on the amorphous silicon layer after the implantation process; and forming a patterned hard mask layer on the amorphous silicon layer after the annealing treatment. |
| 地址 |
Hsin-Chu TW |
