| 发明名称 | Fin-FET replacement metal gate structure and method of manufacturing the same | ||
| 摘要 | A method of forming fins and the resulting fin-shaped field effect transistors (finFET) are provided. Embodiments include forming silicon (Si) fins over a substrate; forming a first metal over each of the Si fins; forming an isolation material over the first metal; removing an upper portion of the isolation material to expose and upper portion of the first metal; removing the upper portion of the first metal to expose an upper portion of each Si fin; removing the isolation material after removing the upper portion of the first metal; and forming a second metal over the first metal and the upper portion of the Si fins. | ||
| 申请公布号 | US9543297(B1) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201514869397 | 申请日期 | 2015.09.29 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Wu Xusheng;Korablev Konstantin G.;Pandey Shesh Mani;Eller Manfred |
| 分类号 | H01L21/82;H01L27/088;H01L21/8234;H01L29/10;H01L21/02;H01L21/3105;H01L21/311;H01L29/66 | 主分类号 | H01L21/82 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A method comprising: forming silicon (Si) fins over a substrate; forming a first metal over each of the Si fins; forming a metal cap layer over the first metal; forming an isolation material over the metal cap layer and first metal; removing an upper portion of the isolation material to expose an upper portion of the first metal; removing the upper portion of the first metal to expose an upper portion of each Si fin; removing the isolation material after removing the upper portion of the first metal; and forming a second metal over the first metal and the upper portion of the Si fins, wherein the metal cap layer covers only a lower portion of the first metal and does not cover the upper portion of each fin. | ||
| 地址 | Grand Cayman KY | ||