Switch device and storage unit

摘要

A switch device includes: a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode and the second electrode. The switch layer includes a first layer containing a chalcogen element, and a second layer containing a high resistance material.

主权项

1. A switch device comprising:
a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode and the second electrode, the switch layer including
a first layer containing a chalcogen element, anda second layer containing a high resistance material, wherein the second layer includes a first portion in contact with a first surface of the first layer, and a second portion in contact with a second surface of the first layer opposite the first surface, and wherein the second electrode is in contact with a storage layer including a resistance variation layer and an ion source layer that contains one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se).