发明名称 CIRCUIT INTEGRE SUR SOI COMPRENANT UN TRANSISTOR DE PROTECTION CONTRE DES DECHARGES ELECTROSTATIQUES
摘要 An integrated circuit includes first and second electronic components, a buried UTBOX insulating layer, first and second ground planes plumb with the first and second electronic components, first and second wells, first and second biasing electrodes making contact with the first and second wells and with the first and second ground planes, a third electrode making contact with the first well, a first trench isolation separating the first and third electrodes and extending through the buried insulating layer as far as into the first well, and a second trench isolation that isolates the first electrode from the first component, and that does not extend as far as the interface between the first ground plane and the first well.
申请公布号 FR3005203(B1) 申请公布日期 2017.01.06
申请号 FR20130053811 申请日期 2013.04.26
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES;STMICROELECTRONICS SA 发明人 FENOUILLET-BERANGER CLAIRE;FONTENEAU PASCAL
分类号 H01L23/60;H01L27/02 主分类号 H01L23/60
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