| 发明名称 |
METHOD FOR PRODUCING OXYNITRIDE FILM BY ATOMIC LAYER DEPOSITION PROCESS |
| 摘要 |
A method for producing an oxynitride film includes: (A) supplying a first precursor containing a network former into a reactor in which a substrate is placed; (B) supplying at least one of an oxygen gas and an ozone gas into the reactor; (C) supplying a second precursor containing at least one of an alkali metal element and an alkaline-earth metal element into the reactor; (D) supplying at least one of a nitrogen gas and an ammonia gas into the reactor; and (E) supplying a purge gas into the reactor. |
| 申请公布号 |
US2017005358(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615188060 |
申请日期 |
2016.06.21 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
NAKAI MIYUKI;SHIBATA SATOSHI |
| 分类号 |
H01M10/058;H01M10/0562;C03C17/22;H01M10/0525;C23C16/30;C23C16/455 |
主分类号 |
H01M10/058 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing an oxynitride film, comprising:
(A) supplying a first precursor containing a network former into a reactor in which a substrate is placed; (B) supplying at least one of an oxygen gas and an ozone gas into the reactor; (C) supplying a second precursor containing at least one of an alkali metal element and an alkaline-earth metal element into the reactor; (D) supplying at least one of a nitrogen gas and an ammonia gas into the reactor; and (E) supplying a purge gas into the reactor. |
| 地址 |
Osaka JP |
