SUB WORD LINE DRIVER OF A SEMICONDUCTOR MEMORY DEVICE

摘要

A sub word line driver of a semiconductor memory device including a sub word line driver is disclosed. The sub word line driver of a semiconductor memory device comprising: a semiconductor substrate including an active region extended in a first direction; a plurality of gate electrodes extended in a second direction perpendicular to the active region; first and second metal contacts formed over the active region between the gate electrodes; a plurality of metal pads coupled to the first metal contacts; and a plurality of metal signal lines coupled to the second metal contacts, extended in the second direction, and bent at specific parts adjacent to the metal pads.

主权项

1. A sub word line driver of a semiconductor memory device comprising:
a semiconductor substrate including a PMOS region and a NMOS region, wherein an active region is formed to extended in a first direction in the PMOS section; a first metal contacts formed over an edge of the active region; a second metal contact formed over a middle of the active region; a gate electrode extended in a second direction perpendicular to the first direction, and formed to include a hole through which a part of the active region is exposed; a metal pads formed over the first metal contact and coupled to the first metal contacts; and a metal signal lines coupled to the second metal contacts, extended in the second direction, and bent in the first direction at a specific parts adjacent to the metal pads, wherein the second metal contact is formed over the exposed active region inside the hole of the gate electrode with a gap between the second metal contact and the gate electrode. wherein the sub word line driver is repeatedly arranged in the first direction, and wherein the bent part of the metal signal line of the sub word line driver is arranged to overlap with a first adjacent sub word line driver. and the bent part of the metal signal line of a second adjacent sub word line driver is arranged to overlap with the sub word line driver such that an upper portion of the gap in the first direction has substantially a same size as a lower portion of the gap in the first direction.