| 摘要 |
A ray detection substrate and a manufacturing method therefor, and a ray detector. The ray detection substrate comprises a base substrate (7) and a thin film transistor (81) and a signal storage unit formed on the base substrate (7). The thin film transistor (81) comprises a grid (801), an insulation layer (802), an active layer (803), a source (814), a drain (824) and a passivation layer (806) which are formed on the base substrate (7) in sequence. The signal storage unit comprises a storage capacitor (85). The storage capacitor (85) comprises a first electrode (807) and a second electrode (809). The first electrode (807) is formed on the insulation layer (802) and overlaps the drain (824). The second electrode (809) is connected to a ground line (820). The passivation layer (806) is formed on the source (814), the drain (824), the first electrode (807) and the ground line (820). By means of the manner in which the first electrode (807) overlaps the drain (824), the second electrode (809) is connected to the ground line (820) via a first through-hole (811), and a third electrode (810) is connected to the first electrode (807) via a second through-hole (822), the number of times a mask is used is reduced, thereby simplifying the machining process of ray detection substrate production and reducing the production cost. |
