发明名称 |
NON-VOLATILE STORAGE SYSTEMS AND METHODS |
摘要 |
A non-volatile storage system is provided. The non-volatile storage system includes a memory array that includes a plurality of bit lines and a plurality of sense blocks, a plurality of bit line select transistors arranged in a bit line select transistor array, each bit line select transistor coupled between a corresponding one of the bit lines and a corresponding one of the sense blocks, the bit line select transistor array including an edge bit line select transistor adjacent an edge of the bit line select transistor array, and a first dummy bit line select transistor adjacent the edge bit line select transistor. |
申请公布号 |
WO2017003619(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
WO2016US35000 |
申请日期 |
2016.05.31 |
申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
HSIUNG, Chia-Lin;TOYAMA, Fumiaki;DUNGA, Mohan |
分类号 |
H01L27/115;G11C11/56;G11C16/04;G11C16/24;G11C16/26 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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