发明名称 NON-VOLATILE STORAGE SYSTEMS AND METHODS
摘要 A non-volatile storage system is provided. The non-volatile storage system includes a memory array that includes a plurality of bit lines and a plurality of sense blocks, a plurality of bit line select transistors arranged in a bit line select transistor array, each bit line select transistor coupled between a corresponding one of the bit lines and a corresponding one of the sense blocks, the bit line select transistor array including an edge bit line select transistor adjacent an edge of the bit line select transistor array, and a first dummy bit line select transistor adjacent the edge bit line select transistor.
申请公布号 WO2017003619(A1) 申请公布日期 2017.01.05
申请号 WO2016US35000 申请日期 2016.05.31
申请人 SANDISK TECHNOLOGIES LLC 发明人 HSIUNG, Chia-Lin;TOYAMA, Fumiaki;DUNGA, Mohan
分类号 H01L27/115;G11C11/56;G11C16/04;G11C16/24;G11C16/26 主分类号 H01L27/115
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