SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes a semiconductor pattern; conductive layers each including a first portion through which the semiconductor pattern passes and a second portion having a thickness greater than the first portion, wherein the first portion of each conductive layer includes a first barrier pattern surrounding the semiconductor pattern and a material pattern, which is formed. In the first barrier pattern and has an etch selectivity with respect to the first barrier pattern, and the second portion of each conductive layer includes a conductive pattern; and contact plugs connected to the second portion of each of the conductive layers.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a stacked structure including a semiconductor pattern, and first material layers and second material layers stacked alternately to surround the semiconductor pattern; forming a slit passing through the stacked structure; forming first openings by removing the first material layers through the slit; forming a first barrier layer in the first openings and the slit; forming a third material layer in the first openings and the slit where the first barrier layer is formed, wherein the third material layer has an etch selectivity with respect to the first barrier layer and includes seams located in the first openings; forming sacrificial patterns filling the seams; forming second openings by partially etching the first barrier layer, the third material layer, and the sacrificial patterns formed in the first openings; and forming conductive patterns in the second openings.