| 发明名称 |
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER ANNEALING |
| 摘要 |
Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous. |
| 申请公布号 |
US2017005003(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615155474 |
申请日期 |
2016.05.16 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDO Takashi;DASGUPTA Aritra;GLUSCHENKOV Oleg;KANNAN Balaji;KWON Unoh |
| 分类号 |
H01L21/8234;H01L21/225;H01L27/088;H01L21/02 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising a millisecond anneal to crystallize a lower portion of a high-k dielectric material with a top layer of the high-k dielectric material being amorphous, with restriction of a substrate preheat temperature during the millisecond anneal to below 600° C. |
| 地址 |
Armonk NY US |
