WAFER PROCESSING TEMPORARY BONDING ARRANGEMENT, WAFER PROCESSING LAMINATE, AND THIN WAFER MANUFACTURING METHOD

摘要

A temporary bonding arrangement for wafer processing is provided comprising a first temporary bond layer (A) of thermoplastic resin, a second temporary bond layer (B) of thermosetting siloxane polymer, and a third temporary bond layer (C) of thermosetting polymer. Layer (B) is cured with a curing catalyst contained in layer (A) which is laid contiguous to layer (B). An adhesive layer of uniform thickness is formed without insufficient step coverage and other failures.

主权项

1. An arrangement for temporarily bonding a wafer to a support for wafer processing, the wafer having a circuit-forming front surface and a back surface to be processed,
said temporary bonding arrangement being a composite temporary adhesive layer comprising a first temporary bond layer (A) of thermoplastic resin, a second temporary bond layer (B) of thermosetting siloxane polymer which is laid contiguous to the first temporary bond layer, and a third temporary bond layer (C) of thermosetting polymer which is laid contiguous to the second temporary bond layer, wherein the first temporary bond layer (A) is a resin layer of a composition comprising (A-1) 100 parts by weight of a thermoplastic resin and (A-2) an amount of a curing catalyst to provide more than 0 part to 1 part by weight of an active ingredient per 100 parts by weight of component (A-1), and the thermosetting siloxane polymer layer (B) is cured with the aid of the curing catalyst in the layer (A) which is contiguous to the layer (B).