发明名称 |
DIE-BONDING LAYER FORMATION FILM, PROCESSED PRODUCT HAVING DIE-BONDING LAYER FORMATION FILM ATTACHED THERETO, AND SEMICONDUCTOR DEVICE |
摘要 |
A die-bonding layer formation film to be used for fixing a processed product to an adherend, includes an adhesive layer, wherein, the storage elastic modulus has a local minimum value at a temperature within a range of 80° C. to 150° C., wherein the adhesive layer has a shear strength to a peeling strength test substrate of 20 N/2 mm□ or more and 50 N/2 mm□ or less, wherein the shear strength is measured after the processed product is placed above the peeling strength test substrate via the die-bonding layer formation film and the die-bonding layer formation film on the peeling strength test substrate is heated at 175° C. for 1 hour and then further maintained under an environment of 250° C. for 30 seconds. Bubbles (voids) are unlikely to grow at the boundary between the adhesive layer and an adherend even when subjected to thermal history. |
申请公布号 |
US2017005062(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
US201515125705 |
申请日期 |
2015.03.16 |
申请人 |
LINTEC CORPORATION |
发明人 |
AZUMA Yuichiro;SUZUKI Hideaki;SAIKI Naoya;SAGAWA Yuta |
分类号 |
H01L23/00;C09J7/02;H01L21/683 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A die-bonding layer formation film to be used for fixing a processed product to an adherend, the processed product being obtained by processing a workpiece, the die-bonding layer formation film comprising an adhesive layer,
wherein, when a temperature dependency of a storage elastic modulus of the adhesive layer is measured, the storage elastic modulus has a local minimum value at a temperature within a range of 80° C. to 150° C., wherein the adhesive layer has a shear strength to a peeling strength test substrate of 20 N/2 mm□ or more and 50 N/2 mm□ or less, wherein the shear strength is measured after the processed product is placed above the peeling strength test substrate via the die-bonding layer formation film and the die-bonding layer formation film on the peeling strength test substrate is heated at 175° C. for 1 hour and then further maintained under an environment of 250° C. for 30 seconds. |
地址 |
Tokyo JP |