发明名称 |
METHOD TO REDUCE RESISTANCE FOR A COPPER (CU) INTERCONNECT LANDING ON MULTILAYERED METAL CONTACTS, AND SEMICONDUCTOR STRUCTURES FORMED THEREFROM |
摘要 |
A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer. |
申请公布号 |
US2017005037(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
US201514755440 |
申请日期 |
2015.06.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Liang Jim S.;Long Justin C.;Ogino Atsushi |
分类号 |
H01L23/528;H01L23/532;H01L23/522;H01L21/768;H01L21/311 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor structure comprising:
forming a first insulating layer containing a first metal layer embedded within an opening thereof and on a surface of a semiconductor substrate; forming an inter-layer dielectric (ILD) layer on the first insulating layer; forming at least one via trench structure in the ILD layer, wherein the at least one via trench includes a first metallization trench and a via; and depositing a metal material on the ILD layer to form a first metallization layer including a first portion of the metal material in the first metallization trench, a via contact including a second portion of the metal material in the via, and a second metal layer including a third portion of the metal material on top of at least a portion of the first metal layer in the opening of the first insulating layer, wherein the first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer. |
地址 |
Armonk NY US |