| 发明名称 |
SEMICONDUCTOR WAFER PROCESSING METHODS AND APPARATUS |
| 摘要 |
A semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by: causing a first temperature change of the semiconductor wafer using a first temperature changing unit; and subsequently causing a second temperature change using a second temperature changing unit; wherein the first change is greater than the second change; and subsequently loading the semiconductor wafer on a processing area of a semiconductor wafer processing apparatus. Also, a semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by causing a temperature change of the semiconductor wafer using a temperature changing unit; transporting the semiconductor wafer from the temperature changing unit to a processing area of a semiconductor wafer processing apparatus; and controlling the temperature of the semiconductor wafer during the transporting step. |
| 申请公布号 |
US2017005019(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201415039759 |
申请日期 |
2014.11.03 |
| 申请人 |
METRYX LIMITED |
发明人 |
WILBY Robert John;KIERMASZ Adrian |
| 分类号 |
H01L21/66;H01L21/677;H01L21/67 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor wafer processing method comprising:
controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by:
causing a first change in the temperature of the semiconductor wafer using a first temperature changing unit; andsubsequently causing a second change in the temperature of the semiconductor wafer using a second temperature changing unit, wherein the second temperature changing unit comprises a thermal transfer plate that is thermally coupled to, or integral to, the processing area of the semiconductor wafer processing apparatus, so that the thermal transfer plate has substantially the same temperature as the processing area of the semiconductor wafer processing apparatus; wherein the magnitude of the first change is greater than the magnitude of the second change; and subsequently loading the semiconductor wafer on to a processing area of a semiconductor wafer processing apparatus. |
| 地址 |
Bristol GB |
