| 发明名称 |
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure, the virtual surface is formed between the upper portion and the lower portion, and the lower portion has a tapered width which is gradually tapered from the virtual interface to a bottom surface of the lower portion. |
| 申请公布号 |
US2017005005(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201514942491 |
申请日期 |
2015.11.16 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
CHEN Chang-Yin;CHANG Chai-Wei;CHEN Yi-Jen;YOUNG Bo-Feng |
| 分类号 |
H01L21/8234;H01L29/423;H01L29/06;H01L29/66;H01L27/088;H01L21/283;H01L21/31;H01L21/311;H01L21/3213;H01L29/78;H01L21/762 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin field effect transistor (FinFET) device structure, comprising:
a fin structure formed over a substrate; and a gate structure traversing over the fin structure, wherein the gate structure comprises a gate electrode layer which comprises an upper portion above the fin structure and a lower portion below the fin structure, a virtual interface is formed between the upper portion and the lower portion, and the lower portion has a tapered width which is gradually tapered from the virtual interface to a bottom surface of the lower portion, an entirety of an upper surface of the gate structure being above an upper surface of the fin structure. |
| 地址 |
Hsinchu TW |
