METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided, which includes forming a first mask pattern and a second mask pattern on a first layer, forming a block mask that covers the second mask pattern on the first layer, forming first spacers on side walls of the first mask pattern, exposing the second mask pattern through removal of the first mask pattern and the block mask, forming a third mask pattern and a fourth mask pattern through etching of the first layer using the first spacers and the second mask pattern as etch masks, and forming second spacers and third spacers on side walls of the third mask pattern and side walls of the fourth mask pattern, respectively.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a first mask pattern and a second mask pattern on a first layer; forming a block mask on the first layer to cover the second mask pattern and not the first mask pattern; forming first spacers on side walls of the first mask pattern; removing the first mask pattern and the block mask to expose the second mask pattern; etching the first layer using the first spacers and the second mask pattern as etch masks to form a third mask pattern and a fourth mask pattern; and forming second spacers and third spacers on side walls of the third mask pattern and side walls of the fourth mask pattern, respectively.