主权项 |
1. A method of performing lithography, the method comprising the steps of:
(a) providing an elastomeric substrate in an unstretched state, the substrate having a first length ls in a dimension of the substrate; (b) applying a tensile stress along the dimension of the substrate, thereby causing the substrate to stretch along said dimension, achieving a stretched state, wherein the substrate has a second length ls′ in the dimension of the substrate; (c) retaining the substrate in its stretched state; (d) optionally, depositing an adhesion-promoting layer onto the stretched substrate; (e) depositing a photoresist layer onto the substrate, or if present, the adhesion-promoting layer, while the substrate is in the stretched state; (f) creating a void in the photoresist layer and, if present, the adhesion-promoting layer by lithography, the void having a first length lv along the dimension of stretch; and (g) relieving the tensile stress, whereby the substrate returns to the unstretched state, and wherein the void has a second length lv′ in said dimension. |