发明名称 |
METAL OXIDE SEMICONDUCTOR THIN FILM, THIN-FILM-TRANSISTOR, AND THEIR FABRICATING METHODS, AND DISPLAY APPARATUS |
摘要 |
A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin. |
申请公布号 |
WO2017000503(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
WO2015CN96946 |
申请日期 |
2015.12.10 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD.;SOUTH CHINA UNIVERSITY OF TECHNOLOGY |
发明人 |
YUAN, Guangcai;YAN, Liangchen;XU, Xiaoguang;WANG, Lei;PENG, Junbiao;LAN, Linfeng |
分类号 |
H01L29/26;H01L21/02 |
主分类号 |
H01L29/26 |
代理机构 |
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代理人 |
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主权项 |
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