| 摘要 |
The technology of the present invention relates to a semiconductor device with built-in current sensing that can improve electrostatic breakdown resistance. This semiconductor device is provided with a first switching element through which a primary current flows, and a second switching element through which a sense current flows. The first switching element is provided with a first gate oxide film (17) formed so as to be in contact with a first base layer (14) that is sandwiched between a first source layer (16) and a drift layer (12). The second switching element is provided with a second gate oxide film (47) formed so as to be in contact with a second base layer (14) that is sandwiched between a second source layer (16) and a drift layer. A portion of the second gate oxide film including a portion that covers the second base layer is thicker than the first gate oxide film. |
