| 发明名称 |
METHODS OF FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines. |
| 申请公布号 |
US2017005099(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615160264 |
申请日期 |
2016.05.20 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Seung-Heon;KIM Munjun;BAE ByeongJu |
| 分类号 |
H01L27/108;H01L21/687;H01L21/033;H01L21/8234;H01L21/3213 |
主分类号 |
H01L27/108 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
defining active regions by forming a device isolation layer in a substrate; forming a conductive layer on the active regions; forming first mask patterns intersecting the active regions on the conductive layer; forming bit lines by etching the conductive layer using the first mask patterns as etch masks; growing second mask patterns on surfaces of the first mask patterns that are opposite to the substrate; and forming contact holes by performing a patterning process using the second mask patterns as etch masks exposing the active regions between the bit lines. |
| 地址 |
Suwon-si KR |
