MULTI-LAYERED CONTACT TO SEMICONDUCTOR STRUCTURE

摘要

A multi-layered contact to a semiconductor structure and a method of making is described. In one embodiment, the contact includes a discontinuous Chromium layer formed over the semiconductor structure. A discontinuous Titanium layer is formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some of the discontinuous sections of the Chromium layer. A discontinuous Aluminum layer is formed directly on the Chromium layer, wherein portions of the Aluminum layer extend into at least some of the discontinuous sections of the Titanium layer and the Chromium layer.