发明名称 |
LOW DAMAGE SELF-ALIGNED AMPHOTERIC FINFET TIP DOPING |
摘要 |
Monolithic finFETs including a majority carrier channel in a first III-V compound semiconductor material disposed on a second III-V compound semiconductor. While a mask, such as a sacrificial gate stack, is covering the channel region, a source of an amphoteric dopant is deposited over exposed fin sidewalls and diffused into the first III-V compound semiconductor material. The amphoteric dopant preferentially activates as a donor within the first III-V material and an acceptor with the second III-V material, providing transistor tip doping with a p-n junction between the first and second III-V materials. A lateral spacer is deposited to cover the tip portion of the fin. Source/drain regions in regions of the fin not covered by the mask or spacer electrically couple to the channel through the tip region. The channel mask is replaced with a gate stack. |
申请公布号 |
WO2017003414(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
WO2015US38197 |
申请日期 |
2015.06.27 |
申请人 |
INTEL CORPORATION |
发明人 |
KAVALIEROS, Jack T.;MOHAPATRA, Chandra S.;MURTHY, Anand S.;RACHMADY, Willy;METZ, Matthew V.;DEWEY, Gilbert;GHANI, Tahir;KENNEL, Harold W. |
分类号 |
H01L29/78;H01L21/336;H01L21/8238 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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