| 发明名称 |
PHOTORESISTORS ON SILICON-ON-INSULATOR SUBSTRATE AND PHOTODETECTORS INCORPORATING SAME |
| 摘要 |
A photoresistor comprises a silicon-on-insulator substrate (101) comprising a device layer (4). In an example embodiment and mode at least two non-contiguous first highly conductive regions (2, 3) of semiconductor material are formed on a surface of the device layer, and at least one active region (1) of a high resistivity semiconductor material of a same conductivity type as the first highly conductive regions are formed to propagate through a whole thickness of the device layer and to electrically contact the at least two non-contiguous first highly conductive regions. |
| 申请公布号 |
US2017005219(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615174112 |
申请日期 |
2016.06.06 |
| 申请人 |
Luna Innovations, Inc. |
发明人 |
GOUSHCHA Alexander O. |
| 分类号 |
H01L31/09;H01L31/028;H01L31/0203;H01L31/0352;H01L31/0216;H01L31/18;H01L31/0392;H01L31/0224 |
主分类号 |
H01L31/09 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photoresistor comprising:
a silicon-on-insulator substrate comprising a device layer; at least two non-contiguous first highly conductive regions of a semiconductor material formed on a surface of the device layer; at least one active region of a high resistivity semiconductor material of a same conductivity type as the first highly conductive regions formed to propagate through a whole thickness of the device layer and to electrically contact the at least two non-contiguous first highly conductive regions. |
| 地址 |
Roanoke VA US |
