| 发明名称 |
SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF |
| 摘要 |
The semiconductor device includes a memory block including programmed pages and non-programmed pages, a peripheral circuit configured to perform a read operation of the memory block, and a control circuit configured to control the peripheral circuit so that a read voltage is applied to a word line coupled to a selected page among the pages for the read operation, a first pass voltage is applied to word lines coupled to the programmed pages among pages that are not selected for the read operation, and a second pass voltage lower than the first pass voltage is applied to word lines coupled to non-programmed pages among the pages that are not selected for the read operation. |
| 申请公布号 |
US2017004885(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201514970755 |
申请日期 |
2015.12.16 |
| 申请人 |
SK hynix Inc. |
发明人 |
KIM Sung Ho;PARK Min Sang;LEE Kyong Taek |
| 分类号 |
G11C16/10;G11C16/04;G11C16/26 |
主分类号 |
G11C16/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a memory block including programmed pages and non-programmed pages; a peripheral circuit configured to provide a read voltage, a first pass voltage, and a second pass voltage during a read operation of the memory block; and a control circuit configured to control the peripheral circuit so that a read voltage is applied to a word line coupled to a selected page among the pages for the read operation, a first pass voltage is applied to word lines coupled to the programmed pages among pages that are not selected for the read operation, and a second pass voltage lower than the first pass voltage is applied to word lines coupled to non-programmed pages among the pages that are not selected for the read operation. |
| 地址 |
Icheon-si Gyeonggi-do KR |
