主权项 |
1. A chamber for processing a semiconductor wafer, the processing of the semiconductor wafer includes performing deposition of a material over a surface of the semiconductor wafer, the chamber comprising,
a pedestal for supporting the semiconductor wafer; a silicon ring surrounding the semiconductor wafer and disposed over the pedestal, the silicon ring having a ring thickness that approximates a semiconductor wafer thickness, the silicon ring has an annular width that extends a process zone over the semiconductor wafer to an extended process zone that is over the semiconductor wafer and the silicon ring; a confinement ring surrounding the silicon ring and disposed on the pedestal, the confinement ring being defined from a dielectric material; a showerhead having a central showerhead area and an extended showerhead area, the central showerhead area being substantially disposed over the semiconductor wafer and the silicon ring and the extended showerhead area being substantially disposed over the confinement ring; wherein the annular width of the silicon ring enlarges a surface area of the semiconductor wafer that is exposed to the extended process zone and shifts non-uniformity effects of deposition materials over the semiconductor wafer from an edge of the semiconductor wafer to an outer edge of the silicon ring. |