| 发明名称 |
Nanocrystalline Quantum Dot Heterostructure |
| 摘要 |
A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material having a first bandgap, and a nanocrystalline shell comprising a second semiconductor material different than the first semiconductor material at least partially surrounding the nanocrystalline core, the second semiconductor material having a second bandgap greater than the first bandgap. |
| 申请公布号 |
US2017005226(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615201217 |
申请日期 |
2016.07.01 |
| 申请人 |
Pacific Light Technologies Corp. |
发明人 |
Mangum Benjamin Daniel;Stott Nathan Evan;Puetz Norbert;Kurtin Juanita N. |
| 分类号 |
H01L33/04;C09K11/02;C09K11/88;H01L33/28 |
主分类号 |
H01L33/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a nanocrystalline core comprising a first semiconductor material, the first semiconductor material having a first bandgap; and a nanocrystalline shell comprising a second semiconductor material different than the first semiconductor material at least partially surrounding the nanocrystalline core, the second semiconductor material having a second bandgap greater than the first bandgap. |
| 地址 |
Portland OR US |
