SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor device includes first fin-shaped structures and second fin-shaped structures, which are separately disposed on a semiconductor substrate. Each of the first and second fin-shaped structures includes a base portion and a top portion protruding from the top portion. The base portions of the second fin-shaped structures are wider than the top portions of the second fin-shaped structures, and the top portions of the second fin-shaped structures are as wide as the top portions of the first fin-shaped structures. Each second fin-shaped structure further includes a recessed region on its sidewall.

主权项

1. A semiconductor device, comprising:
a plurality of first fin-shaped structures disposed on a semiconductor substrate, wherein each of the first fin-shaped structures comprises: a base portion disposed on the semiconductor substrate; and a top portion extending from the base portion of the first fin-shaped structure, wherein the top portion of each of the first fin-shaped structure has a first width; a plurality of second fin-shaped structures disposed on the semiconductor substrate, wherein each of the second fin-shaped structures comprises: a base portion disposed on the semiconductor substrate; and a top portion extending from the base portion of the second fin-shaped structure, wherein the top portion of each of the second fin-shaped structure has the first width; and a recessed region disposed on a sidewall of each of the second fin-shaped structures; and a shallow trench isolation disposed between the first fin-shaped structures and the second fin-shaped structures so that portions of each of the top portions protrude from the surface of the shallow trench isolation, wherein the base portions of the second fin-shaped structures are separately disposed on the semiconductor substrate.