SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device includes a semiconductor substrate including multiple active regions having a common conductivity type and separate, respective gate electrodes on the separate active regions. Different high-k dielectric layers may he between the separate active regions and the respective gate electrodes on the active regions. Different quantities of high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. The different high-k dielectric layers may include different work-function adjusting materials.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate including a first active region, a second active region, and a third active region; a first gate electrode on the first active region, a second gate electrode on the second active region, and a third gate electrode provided on the third active region; a separate first high-k dielectric layer between each of the first and third gate electrodes and the semiconductor substrate; and second and third high-k dielectric layers between the second gate electrode and the semiconductor substrate; wherein the first high-k dielectric layer includes a first work-function adjusting material, and the second and third high-k dielectric layers include a second work-function adjusting material, the first gate electrode and the second gate electrode have substantially common effective work-functions, and the third gate electrode and the second gate electrode have different effective work-functions.