| 发明名称 |
FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS |
| 摘要 |
A continuous fin having a first segment and a second segment in a semiconductor layer, the first segment is arranged at an angle relative to the second segment, and a first gate and a second gate substantially parallel to each other, the first gate substantially covering sides and a top of a portion of the first segment of the continuous fin, the second gate substantially covering sides and a top of a portion of the second segment of the continuous fin. |
| 申请公布号 |
US2017005114(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615267193 |
申请日期 |
2016.09.16 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Leobandung Effendi;Yamashita Tenko |
| 分类号 |
H01L27/12;H01L27/02 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure comprising:
a continuous fin having a first segment and a second segment in a semiconductor layer, the first segment is arranged at an angle relative to the second segment; and a first gate and a second gate substantially parallel to each other, the first gate substantially covering sides and a top of a portion of the first segment of the continuous fin, the second gate substantially covering sides and a top of a portion of the second segment of the continuous fin. |
| 地址 |
Armonk NY US |
