SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device that includes a passivation film thinner than a wiring layer and has a high resistance to a stress caused during bonding. In the semiconductor device, a wiring layer (303) is formed in the vicinity of a bonding pad (301) via a gap (601), a passivation film (401) has a thickness smaller than that of the wiring layer (303) forming the bonding pad (301), and the gap (601) has a width equal to or smaller than twice the passivation film thickness.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; an insulating film formed on a surface of the semiconductor substrate; a bonding pad formed on the insulating film; a top wiring layer formed on the insulating film around the bonding pad via a gap; and a passivation covering the top wiring layer and a portion of the bonding pad, the passivation film having a thickness smaller than a thickness of the bonding pad; the gap having a width equal to or larger than the thickness of the passivation film covering the top wiring layer, and equal to or smaller than twice a side wall thickness of the passivation film covering a side wall of the top wiring layer.