| 发明名称 |
Manufacturing Method of Semiconductor Device |
| 摘要 |
In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF4 gas and C3H2F4 gas as its components. |
| 申请公布号 |
US2017004976(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615267993 |
申请日期 |
2016.09.16 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
HORIKOSHI Kotaro;HANAWA Toshikazu;AKAISHI Masatoshi;KIKUCHI Yuji |
| 分类号 |
H01L21/311;H01L21/768 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
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| 主权项 |
|
| 地址 |
Tokyo JP |
