发明名称 |
DIAMOND DELAYERING FOR ELECTRICAL PROBING |
摘要 |
Milling using a scanning probe microscope with a diamond tip removes a layer of material and produces a surface that is sufficiently smooth that it can be probed using a nanoprober to provide site-specific sample preparation and delayering. Diamond milling provides in situ, localized, precision delayering inside of a nanoprobing tool, thereby decreasing the turnaround time for integrated circuit analysis. Furthermore, unlike focused ion beam delayering, the diamond tip should not alter the electrical characteristics of the integrated circuit. |
申请公布号 |
US2017003336(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
US201615182571 |
申请日期 |
2016.06.14 |
申请人 |
DCG Systems, Inc. |
发明人 |
Ippolito Stephen;Zumwalt Sean;Erickson Andrew Norman |
分类号 |
G01R31/26;G01Q80/00 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for delayering a region of a semiconductor device on a substrate, the region having at first set of opposing edges and a second set of opposing edges, the method comprising:
repeatedly scanning a single crystal diamond probe tip of a scanning probe microscope back and forth along different paths between a first set of opposing edges while pressing the probe tip into the substrate to mill an area of the semiconductor circuit to remove a layer of material from the region and expose a buried circuit layer; electrically contacting the exposed circuit layer with an electrical probe; and measuring a signal from the circuit. |
地址 |
Fremont CA US |