发明名称 DIAMOND DELAYERING FOR ELECTRICAL PROBING
摘要 Milling using a scanning probe microscope with a diamond tip removes a layer of material and produces a surface that is sufficiently smooth that it can be probed using a nanoprober to provide site-specific sample preparation and delayering. Diamond milling provides in situ, localized, precision delayering inside of a nanoprobing tool, thereby decreasing the turnaround time for integrated circuit analysis. Furthermore, unlike focused ion beam delayering, the diamond tip should not alter the electrical characteristics of the integrated circuit.
申请公布号 US2017003336(A1) 申请公布日期 2017.01.05
申请号 US201615182571 申请日期 2016.06.14
申请人 DCG Systems, Inc. 发明人 Ippolito Stephen;Zumwalt Sean;Erickson Andrew Norman
分类号 G01R31/26;G01Q80/00 主分类号 G01R31/26
代理机构 代理人
主权项 1. A method for delayering a region of a semiconductor device on a substrate, the region having at first set of opposing edges and a second set of opposing edges, the method comprising: repeatedly scanning a single crystal diamond probe tip of a scanning probe microscope back and forth along different paths between a first set of opposing edges while pressing the probe tip into the substrate to mill an area of the semiconductor circuit to remove a layer of material from the region and expose a buried circuit layer; electrically contacting the exposed circuit layer with an electrical probe; and measuring a signal from the circuit.
地址 Fremont CA US