发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
Provided is a semiconductor device that includes: a gate electrode (2); a channel layer (7) that is disposed in a region directly below or directly above the gate electrode (2); a source electrode (5) and drain electrode (6), which are disposed in contact with the channel layer (7); and a first insulating layer (3) that is disposed between the gate electrode (2) and the channel layer (7). The channel layer (7) includes a first oxide semiconductor, the source electrode (5) and/or drain electrode (6) includes a second oxide semiconductor, and the first oxide semiconductor and the second oxide semiconductor contain indium, tungsten, and zinc. A method for manufacturing the semiconductor device is also provided. |
申请公布号 |
WO2017002384(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
WO2016JP53541 |
申请日期 |
2016.02.05 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MIYANAGA, Miki;WATATANI, Kenichi;AWATA, Hideaki |
分类号 |
H01L21/336;C23C14/08;C23C14/58;H01L21/363;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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