| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate. |
| 申请公布号 |
US2017005196(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201514788522 |
申请日期 |
2015.06.30 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN Chih-Fen;PENG Chui-Ya;YU Ching;LIN Pin-Hen;CHUANG Yen;FAN Yuh-Ta |
| 分类号 |
H01L29/78;H01L29/08;H01L29/66;H01L29/16;H01L29/165;H01L29/06;H01L29/161 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate having a recess; a liner disposed in the recess, wherein the liner is denser than the substrate; and an epitaxy structure disposed in the recess, wherein the liner is disposed between the epitaxy structure and the substrate. |
| 地址 |
HSINCHU TW |
