Semiconductor Device and Methods for Forming a Semiconductor Device

摘要

A semiconductor device includes a plurality of compensation regions of a vertical electrical element arrangement, a plurality of drift regions of the vertical electrical element arrangement and a non-depletable doping region. The compensation regions of the plurality of compensation regions are arranged in a semiconductor substrate of the semiconductor device. Further, the plurality of drift regions of the vertical electrical element arrangement are arranged in the semiconductor substrate within a cell region of the semiconductor device. The plurality of drift regions and the plurality of compensation regions are arranged alternatingly in a lateral direction. The non-depletable doping region extends laterally from an edge of the cell region towards an edge of the semiconductor substrate. The non-depletable doping region has a doping non-depletable by voltages applied to the semiconductor device during blocking operation.

主权项

1. A semiconductor device, comprising:
a plurality of compensation regions of a vertical electrical element arrangement, wherein the compensation regions of the plurality of compensation regions are arranged in a semiconductor substrate of the semiconductor device; a plurality of drift regions of the vertical electrical element arrangement arranged in the semiconductor substrate within a cell region of the semiconductor device, the plurality of drift regions and the plurality of compensation regions being arranged alternatingly in a lateral direction; and a non-depletable doping region extending laterally from an edge of the cell region towards an edge of the semiconductor substrate, wherein the non-depletable doping region comprises a doping non-depletable by voltages applied to the semiconductor device during a blocking operation, wherein the plurality of compensation regions and the non-depletable doping region comprise a first conductivity type and the plurality of drift regions comprise a second conductivity type, wherein the non-depletable doping region comprises a maximal doping concentration at an area close to the cell region and a lower doping concentration of at least 10% of the maximal doping concentration of the non-depletable doping region at a lateral distance of more than 20 μm to a closest contact area between the semiconductor substrate and an electrically conductive contact structure of the vertical electrical element arrangement within the cell region, at a lateral distance of more than a depth of a drift zone or a compensation region of the plurality of compensation regions to a closest contact area between the semiconductor substrate and the electrically conductive contact structure of the vertical electrical element arrangement within the cell region, or at a position located closer to an edge of the semiconductor substrate than a gate field plate implemented by a lowest electrically conductive layer.