BIPOLAR TRANSISTOR HAVING COLLECTOR WITH DOPING SPIKE

摘要

This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.

主权项

1. A bipolar transistor comprising a collector including a first end and a second end opposite the first end, a sub-collector abutting the second end of the collector, a base abutting the first end of the collector, and an emitter, the collector including a doping spike disposed closer to the first end than to the second end, the doping spike having a thickness of 200 Å or less, the collector also including a doped portion disposed between the doping spike and the base, the bipolar transistor being a single heterojunction bipolar transistor.