EMBEDDED METAL-INSULATOR-METAL CAPACITOR

摘要

A semiconductor device includes a first metallization layer including a first dielectric layer. A first conductive layer and a first conductive structure are embedded in the first dielectric layer. A second dielectric layer is disposed on the first metallization layer. A second conductive layer is disposed on the second dielectric layer and has a lateral dimension in a lateral direction larger than a lateral dimension of the first conductive layer in the lateral direction. A third dielectric layer is disposed on the second conductive layer. A first contact is disposed in the third dielectric layer and extends through the second conductive structure in a first peripheric region thereof that does not overlap the first conductive layer to contact the first conductive structure. A capacitor structure includes the first conductive layer, the second dielectric layer and the second conductive layer.

主权项

1. A semiconductor device, comprising
a first metallization layer comprising a first dielectric layer; a first conductive layer and a first conductive structure embedded in said first dielectric layer; a second dielectric layer disposed on said first metallization layer; a second conductive layer disposed on said second dielectric layer and having a lateral dimension in a lateral direction larger than a lateral dimension of said first conductive layer in said lateral direction; a third dielectric layer disposed on said second conductive layer; a first contact disposed in said third dielectric layer and extending through said second conductive structure in a first peripheric region thereof that does not overlap said first conductive layer to contact said first conductive structure; and a capacitor structure comprising said first conductive layer, said second dielectric layer and said second conductive layer.