| 摘要 |
A method for bonding and interconnecting two or more IC devices arranged on substrates such as silicon wafers is disclosed. In one aspect, the wafers are bonded by a direct bonding technique to form a wafer assembly, and the multiple IC devices are provided with metal contact structures. A TSV (Through Semiconductor Via) is produced through the bonded wafer assembly. The IC device or devices in the upper wafer or wafers have contact structures that serve as masks for the etching of the TSV opening. A conformal isolation liner is deposited in the TSV opening, and subsequently removed from the bottom and any horizontal areas in the TSV opening, while maintaining the liner on the sidewalls, followed by deposition of a TSV plug in the TSV opening. The removal of the liner is done without applying a lithography step. |
| 主权项 |
1. A method for bonding and interconnecting a first IC device arranged on a first substrate to a second IC device arranged on a second substrate, wherein each IC device comprises a dielectric bonding layer at its outer surface, and wherein each IC device further comprises one or more metal contact structures, the method comprising the consecutive steps of:
positioning the first substrate with respect to the second substrate, with the bonding layers of the first and second IC device facing each other, by aligning a first metal contact structure in the first IC device to a second metal contact structure in the second IC device; direct bonding of the substrates, thereby forming a substrate assembly, optionally thinning the first substrate; producing by a lithography step and an etching procedure, a first opening in the first substrate, until reaching the first metal contact structure, wherein the first metal contact structure partially covers a cross-section of the first opening; with the first metal contact structure acting as a mask, etching one or more second openings in the second substrate, stopping on the second metal contact structure, the first and second opening thereby forming an aggregate opening; producing an isolation layer on the sidewalls and the bottom of at least the first opening; removing the isolation layer from at least the bottom of the first opening, while essentially maintaining the isolation layer on at least the sidewalls of the first opening, without applying a lithography step; and producing a metal contact plug in the aggregate opening, the metal plug interconnecting the first and second contact structures. |
