| 发明名称 |
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE |
| 摘要 |
Provided are methods of fabricating a semiconductor device. According to the method, a first glue layer, a first release layer, a second glue layer, and a second release layer may be sequentially interposed between a carrier and a device wafer. All of the first glue layer, the first release layer, the second glue layer, and the second release layer may be formed of thermosetting resin. |
| 申请公布号 |
US2017004990(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201415112429 |
申请日期 |
2014.03.19 |
| 申请人 |
Kang Un-Byoung;Sohn Joonsik;Ahn Jung-Seok;Lee Chungsun;Cho Taeje |
发明人 |
Kang Un-Byoung;Sohn Joonsik;Ahn Jung-Seok;Lee Chungsun;Cho Taeje |
| 分类号 |
H01L21/683;H01L23/00;H01L25/00;H01L21/78;H01L23/544;H01L25/065;H01L21/48;H01L21/56 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, comprising:
sequentially forming a first glue layer and a first release layer on a first substrate; sequentially forming a second release layer and a second glue layer on a second substrate; and attaching the first substrate to the second substrate in such a way that the first release layer is in contact with the second glue layer. |
| 地址 |
Hwaseong-si KR |
