| 发明名称 |
Reducing Autodoping of III-V Semiconductors By Atomic Layer Epitaxy (ALE) |
| 摘要 |
In one aspect, a method for forming a doped III-V semiconductor material on a substrate includes the steps of: (a) forming a first monolayer on the substrate, wherein the first monolayer comprises at least one group III or at least one group V element; and (b) forming a doped second monolayer on a side of the first monolayer opposite the substrate, wherein the second monolayer comprises either i) at least one group V element if the first monolayer comprises at least one group III element, or ii) at least one group III element if the first monolayer comprises at least one group V element, wherein a dopant is selectively introduced only during formation of the second monolayer, and wherein steps (a) and (b) are performed using atomic layer epitaxy. Doped III-V semiconductor materials are also provided. |
| 申请公布号 |
US2017004969(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201514755636 |
申请日期 |
2015.06.30 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cohen Guy M.;Lavoie Christian |
| 分类号 |
H01L21/02;C30B29/40;C30B25/14 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for forming a doped III-V semiconductor material on a substrate, the method comprising the steps of:
(a) forming a first monolayer on the substrate, wherein the first monolayer comprises at least one group III or at least one group V element; (b) forming a doped second monolayer on a side of the first monolayer opposite the substrate, wherein the second monolayer comprises either i) at least one group V element if the first monolayer comprises at least one group III element, or ii) at least one group III element if the first monolayer comprises at least one group V element, wherein a dopant is selectively introduced only during formation of the second monolayer, and wherein steps (a) and (b) are performed using atomic layer epitaxy. |
| 地址 |
Armonk NY US |
