发明名称 |
THERMAL MANAGEMENT STRUCTURE FOR LOW-POWER NONVOLATILE FILAMENTARY SWITCH |
摘要 |
Heat-trapping bulk layers or thermal-boundary film stacks are formed between a heat-assisted active layer and an associated electrode to confine such transient heat to the active layer in a heat-assisted device (e.g., certain types of resistance-switching and selector elements used in non-volatile memory. Preferably, the heat-trapping layers or thermal-boundary stacks are electrically conductive while being thermally insulating or reflective. Heat-trapping layers use bulk absorption and re-radiation to trap heat. Materials may include, without limitation, chalcogenides with Group 6 elements. Thermal-boundary stacks use reflection from interfaces to trap heat and may include film layers as thin as 1-5 monolayers. Effectiveness of a thermal-boundary stack depends on the thermal impedance mismatch between layers of the stack, rendering thermally insulating bulk materials optional for thermal-boundary stack components. |
申请公布号 |
WO2017003960(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
WO2016US39682 |
申请日期 |
2016.06.28 |
申请人 |
INTEL CORPORATION |
发明人 |
KARPOV, Elijah;MAJHI, Prashant;MUKHERJEE, Niloy;PILLARISETTY, Ravi;SHAH, Uday;DOYLE, Brian;CHAU, Robert |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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