STABILIZED QUANTUM DOT STRUCTURE AND METHOD OF MAKING A STABILIZED QUANTUM DOT STRUCTURE

摘要

A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

主权项

1. A stabilized quantum dot structure for use in a light emitting device, the stabilized quantum dot structure comprising:
a luminescent particle comprising one or more semiconductors; a buffer layer overlying the luminescent particle, the buffer layer comprising an amorphous material; and a barrier layer overlying the buffer layer, the barrier layer comprising oxygen, nitrogen and/or carbon.