| 发明名称 |
LIGHT EMITTING DIODE WITH ZnO EMITTER |
| 摘要 |
A light emitting diode (LED) includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. A p-type confinement layer is provided on the p-type substrate. An emission layer is provided on the p-type confinement layer. An n-type confinement layer is provided on the emission layer. A transparent II-VI n-type contact layer is formed on the n-type confinement layer as a replacement for a current spreading layer, a III-V contact layer and an n-type ohmic contact. |
| 申请公布号 |
US2017005229(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201514788018 |
申请日期 |
2015.06.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Fogel Keith E.;Kim Jeehwan;Li Ning;Sadana Devendra K. |
| 分类号 |
H01L33/30;H01L33/38;H01L33/14;H01L33/42;H01L33/00 |
主分类号 |
H01L33/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode (LED), comprising:
a p-type ohmic contact; a p-type substrate in direct contact with the p-type ohmic contact; a p-type confinement layer directly on the p-type substrate; an emission layer on the p-type confinement layer; an n-type confinement layer on the emission layer; and a transparent II-VI n-type contact layer formed directly on the n-type confinement layer as a replacement for a current spreading layer, a III-V contact layer and an n-type ohmic contact. |
| 地址 |
Armonk NY US |
