LIGHT-EMITTING SEMICONDUCTOR DEVICE INCLUDING A STRUCTURED PHOTOLUMINESCENT LAYER

摘要

The invention relates to a light-emitting optoelectronic device (1) including: - at least one light-emitting diode (10) having an emission surface (11); and - a photoluminescent layer (30), which at least partially coats the emission surface, including at least one first luminophore (Le) suitable for absorbing incident light radiation emitted by the light-emitting diode and for emitting in response light radiation at a first wavelength, and including at least one cavity (33i) formed from a side (32) of the photoluminescent layer that is opposite the emission surface. At least one second luminophore (Li) is placed in said cavity (33i), the second luminophore being suitable for absorbing incident light radiation and for emitting in response light radiation at a second wavelength different from the first wavelength.