摘要 |
A pulse generation device (1) for generating pulses for a magnetron sputtering system, such as high power impulse magnetron sputtering (HiPIMS), the pulse generation device (1 ) having a power input (3a, 3b, 3c) and further comprises a first switching unit (4) generating the pulses, the first switching (4) unit comprising at least two metal-insulation-semiconductor field-effect transistors (MISFETs) (51, 5n) connected in parallel, the power input (3a, 3b, 3c) being split into at least two current channels, each current channel comprising a respective one of the transistors (51, 5n), and a driver (6-1, 6n) assigned to each transistor (51, 5n). the pulse generation device further comprising a control unit (7) which is arranged to control each transistor (51, 5n) individually and to synchronize on and off of the transistors (51, 5n) through the drivers (6-1, 6n) such that current from the at least two current channels results in the pulses. |
申请人 |
STYERVOYEDOV, Mykola;STYERVOYEDOV, Sergiy;STYERVOYEDOV, Andriy;OLEKSIY, Vozniy;JOHANNA, Rosén |
发明人 |
STYERVOYEDOV, Mykola;STYERVOYEDOV, Sergiy;STYERVOYEDOV, Andriy;OLEKSIY, Vozniy;JOHANNA, Rosén |