OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

The present invention relates to an oxide semiconductor thin-film transistor and a manufacturing method therefor, and the method for manufacturing an oxide semiconductor thin-film transistor comprises: a first step of forming a gate electrode by depositing and patterning a gate layer on a substrate; a second step of depositing a gate insulating film on the gate electrode; a third step of depositing and patterning an oxide semiconductor on the gate insulating film; and a fourth step of processing the oxide semiconductor by using plasma including fluorine (F).