SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes a first semiconductor layer, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, a gate electrode formed over the third semiconductor layer, and a gate insulating film formed between the third semiconductor layer and the gate electrode. The second semiconductor layer includes an Alyα1-yN layer (α includes Ga or In, and 0≦y<1), and the third semiconductor layer includes an Alzα1-zN layer (0≦z<1). y of the Alyα1-yN layer forming the second semiconductor layer increases from the third semiconductor layer to the first semiconductor layer at least in a region under the gate electrode. There is a relationship “z>y” at an interface between the second nitride semiconductor layer and the third nitride semiconductor layer.

主权项

1. A semiconductor device, comprising:
a first semiconductor layer; a second semiconductor layer formed over the first semiconductor layer; a third semiconductor layer formed over the second semiconductor layer; a gate electrode formed over the third semiconductor layer; and a gate insulating film formed between the third semiconductor layer and the gate electrode, wherein the second semiconductor layer comprises an Alyα1-yN layer (a comprises Ga or In, and 0≦y<1), and the third semiconductor layer comprises an Alzα1-zN layer (0≦z<1), wherein y of the Alyα1-yN layer forming the second semiconductor layer increases from the third semiconductor layer to the first semiconductor layer at least in a region under the gate electrode, and wherein there is a relationship “z>y” at an interface between the second nitride semiconductor layer and the third nitride semiconductor layer.