THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME

摘要

A thin-film transistor substrate and a display device comprising the same are provided which can improve display quality by reducing or preventing deterioration of the characteristics of thin-film transistors. The thin-film transistor substrate comprises thin-film transistors on a lower protective metal layer. Each thin-film transistor comprises a buffer layer, a semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a source electrode and a drain electrode, and a first electrode. The lower protective metal layer is electrically connected to the gate electrode and overlaps the channel region of the semiconductor layer.

主权项

1. A thin-film transistor substrate comprising:
a lower protective metal layer on a substrate; a buffer layer on the lower protective metal layer; a semiconductor layer on the buffer layer and comprising a channel region, lightly doped regions, a source region, and a drain region; a first insulating film on the semiconductor layer; a gate electrode on the first gate insulating film and electrically connected to the lower protective metal layer; a second insulating film on the gate electrode; source and drain electrodes on the second insulating film and electrically connected to the source and drain regions; and a first electrode electrically connected to the drain region, wherein the lower protective metal layer overlaps the channel region of the semiconductor layer.