| 发明名称 |
MONITOR PROCESS FOR LITHOGRAPHY AND ETCHING PROCESSES |
| 摘要 |
A monitor process for lithography and etching processes includes the following steps. A first lithography process and a first etching process are performed to define a first alignment mark having a first direction portion orthogonal to a second direction portion. A second lithography process is performed to overlap a part of the first direction portion as well as a part of the second direction portion, thereby maintaining an exposed area of the first alignment mark having a first corresponding direction portion and a second corresponding direction portion. A first critical dimension of the first corresponding direction portion and a second critical dimension of the second corresponding direction portion are measured. |
| 申请公布号 |
US2017005015(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201514791241 |
申请日期 |
2015.07.02 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Li Jhen-Cyuan;Chen Yi-Lin;Lu Shui-Yen |
| 分类号 |
H01L21/66;H01L21/027;H01L21/306;H01L23/544;H01L21/8238 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A monitor process for lithography and etching processes, comprising:
performing a first lithography process and a first etching process to define a first alignment mark having a first direction portion orthogonal to a second direction portion; performing a second lithography process to overlap a part of the first direction portion as well as a part of the second direction portion, thereby maintaining an exposed area of the first alignment mark having a first corresponding direction portion and a second corresponding direction portion; and after the second lithography process being performed, measuring a first critical dimension of the first corresponding direction portion and a second critical dimension of the second corresponding direction portion. |
| 地址 |
Hsin-Chu City TW |
